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Please use this identifier to cite or link to this item: http://ir.hust.edu.tw/dspace/handle/310993100/1387

Title: Evaluation of single- and multilayered amorphous tantalum nitride thin films as diffusion barriers in copper metallization
Authors: G. S. Chen;S. T. Chen;L. C. Yang;P. Y. Lee
Date: 2000
Issue Date: 2009-02-03T07:01:33Z
Relation: J. Vac. Sci. Technol. A, 18, pp. 720?723. (SCI)
Appears in Collections:[Department of Electronic Engineering] Journal

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