Hsiuping University of Science and Technology Institutional Repository : Item 310993100/1424

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HUSTIR > College of Engineering > Department of Electronic Engineering > Journal > Item 310993100/1424

Please use this identifier to cite or link to this item: http://ir.hust.edu.tw/dspace/handle/310993100/1424

Title:	The Grain Growth and Admittance-Frequency Properties of the ZnO Semiconductor
Authors:	H. Z. Chen
Date:	1998
Issue Date:	2009-02-03T07:03:25Z
Relation:	SHU TEH Journal, Vol. 21, pp. 287-308
Appears in Collections:	[Department of Electronic Engineering] Journal

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