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http://ir.hust.edu.tw/dspace/handle/310993100/2252
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| 題名: | 以溶膠-凝膠法製備鈮摻雜鈦酸鉍鐵電薄膜之特性研究
The Properties of Nb-dope Bismuth Titanate Ferroelectric Thin films prepared by the Sol-Gel Processes |
| 作者: | 李健銘 |
| 貢獻者: | 電機工程研究所 |
| 關鍵詞: | 溶膠-凝膠法
快速熱處理
鐵電薄膜 |
| 日期: | 2009-07
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| 上傳時間: | 2011-05-23T06:10:41Z
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| 摘要: | 本研究以溶膠-凝膠法及快速熱處理技術製備鈮(Nb)摻雜鈦酸鉍[Bi4Ti3-yNbyO12鐵電薄膜，簡稱BTNO]鐵電薄膜，以旋轉塗佈法將薄膜沈積於Pt/Ti/SiO2 /Si(100)基板上，改變鈮(Nb)元素的摻雜濃度（y= 0、0.02、0.04、0.06、0.08、0.1）及熱處理溫度(500~800
oC)，探討不同製程參數對BTNO鐵電薄膜之晶體結構、晶粒大小、漏電流特性、介電特性及鐵電特性之影響。
實驗結果顯示，薄膜中鈮(Nb)含量濃度會直接影響到 BTNO 薄膜的晶體結構及鐵電特性。在結晶特性方面，BTNO 薄膜之(117)軸優選排向強度比例值α在y＝0.04時會有最大值為α＝0.91 ，且 鈮(Nb)摻雜濃度y＝0.04時，在外加電場E=100 kV/cm下，具有最小之漏電流密度為 J=6.14×10-9A/cm2，同時在鐵電特性方面，在 y＝0.04 時具有最佳之鐵電特性，其殘留極化量 Pr及矯頑電場 Ec 分別 2Pr＝33 μC/cm2、2Ec＝ 160 kV/cm。這是因為 BTNO 薄膜中 4 價之 Ti4+離子被 5 價之Nb5+
離子所取代，使薄膜產生多餘電子補償氧空缺濃度，且(117)軸排向是最靠近極化軸之排向，故Bi4Ti2.96Nb0.04O12薄膜具有最佳之鐵電特性，最適合於非揮發性鐵電記憶體之應用。
In this study, the Bi4Ti3-yNbyO12 (BTNO) ferroelectric thin films with various Nb-dope contents were prepared by sol-gel method and heated by rapid thermal annealing (RTA).The BTNO thin films were deposited on Pt/Ti/SiO2/Si(100) substrate by spin coating. The concentrations of Nb（y=0, 0.02, 0.04, 0.06, 0.08, 0.1）and heattreatments temperature (500 ℃, 600 ℃, 700 ℃ and 800 ℃), studied the BTNO ferroelectric thin films that effected to crystal structure, dielectric, leakage current and ferroelectric properties in different conditions.
The experimental results, the Nb concentrations effected to BTNO thin films crystal structure and ferroelectric properties. In crystal structure aspect, (117) orientation of BTNO thin films to intensitying proportion value when y=0.04 have the maximum value for ?=0.91. In elevated cycling field E=100 kV/cm that had the leakage current J=6.14×10-9 A/cm2. The ferroelectric properties had better property at the concentration of y=0.04. The remanent polarization (2Pr) of 33 μC/cm2 and coercive field (2Ec) of 160 kV/cm respectively. Because the valence of BTNO thin films Nb5+ substituted for Ti4+ ions , the extra electrons atone for oxygen vacant concentration. The (117) orientation of crystal structure approach the polarized orientation furthermore. Therefore Bi4Ti2.96Nb0.04O12 had better ferroelectric properties, to agree application to the non-volatile ferroelectric memory. |
| 描述: | 指導教授：陳宏仁博士 |
| 顯示於類別: | [電機工程系(含碩士班)] 學位論文
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