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題名: 鉭離子摻雜對二氧化鈦染料敏化太陽能電池之特性研究
The Effect of Ta Doping on The Performance of Dye-sensitized TiO2 Solar Cells
作者: 洪子堯
貢獻者: 電機工程研究所
關鍵詞: 二氧化鈦
短路電流
開路電壓
染料敏化太陽能電池
日期: 2009-07
上傳時間: 2011-05-23T06:23:12Z
摘要: 本論文以溶膠 - 凝膠法及快速熱處理技術製備鉭 (Ta) 摻雜二氧化鈦(TiO2)1-x(Ta2O5)x薄膜，以旋轉塗佈法將薄膜沈積於FTO基板上，改變Ta元素的摻雜濃度（x= 0、0.1%、0.3%、0.5%、0.8%）及熱處理溫度(500 oC ~700oC)，探討不同製程參數對(TiO2)1-x(Ta2O5)x薄膜之晶體結構、表面微結構及光學特性等影響，最後製作
成染料敏化太陽能電池，研究染料敏化太陽能電池之特性。實驗結果顯示，Ta 摻雜二氧化鈦薄膜仍然維持二氧化鈦之銳鈦礦(101)軸優選排向，隨著 Ta 含量的增加，(TiO2 )1-x(Ta2O5)x 薄膜的能隙值由 2.932 ev 下降至 2.717ev，顯示可見光波長之光學吸收也會增加。在薄膜微結構方面，隨著 Ta 含量的增加，薄膜孔隙度會有增加的趨勢，且在 x＝0.5%最為明顯，對染料的吸附可以達到最大的效果。另外在太陽能電池之特性方面，Ta 含量的增加能有效提高染料敏化太陽能電池短路電流密度 JSC（mA/cm2）和光電轉換效率η（%），但會使得太陽能電池之開路電壓 VOC（V）下降。最後經由計算結果得知，當x＝0.5%時可以達到最佳化的染料敏化太陽能電池效能為VOC＝0.58 V、JSC＝5.47 mA/cm2、FF＝40.2 ％、η＝1.28％。
In this study, tantalum doped TiO2 thin films ((TiO2)1-x(Ta2O5)x, x=0, 0.1 %, 0.3 %, 0.5 %, 0.8 %) were prepared on FTO-coated substrates by means of sol-gel method and spin coating technology followed by rapid thermal annealing treatment (RTA). The effects of various processing parameters, including Ta content (x=0-0.8 %) and annealing temperature, on the growth and properties of thin films were investigated. In addition, (TiO2)1-x(Ta2O5)x thin films were applied for the application of the work electrode for the dye-sensitized solar cell (DSSC). The effects of various Ta content on the properties of DSSC are studied also.
Experimental results reveal that the doping of Ta2O5 in the TiO2 without change the anatase structure of (101)-axis orientation. The absorption coefficient shows energy gap were decreased with increasing Ta2O5 content from 2.932 eV to 2.717 eV. Doping TiO2 with Ta2O5 can lower its band gap and shift its optical absorbance to the visible region. With the increase of Ta content, the porosity of thin film increased and the (TiO2)1-x(Ta2O5)x thin films with x=0.5% exhibited the largest porosity to increase the adsorption of the N3 dye. From the solar cell results, the increases in Ta content of TiO2 films can increase short-circuit photocurrent (Jsc) and efficiency η (%), respectively. However, the open circuit voltage (Voc) of DSSC decreased as the Ta content increased. After calculation, the The optimum properties of DSSC of VOC=0.58 V, Jsc＝5.47 mA/cm2, FF＝40.2 ％, and η＝1.28 ％ were obtained by the (TiO2)1-x(Ta2O5)x thin films with x=0.5%, respectively.
描述: 指導教授：高銘政
顯示於類別:[電機工程系(含碩士班)] 學位論文

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