| 摘要: | 本研究主要利用溶膠凝膠法製備ZnO晶種層於ITO透明導電玻璃基板上，並使用化學沐浴沉積法在ZnO晶種層上浸泡成長出Zn1-xGdxO奈米線。探討不同不同浸泡濃度(5mM,10mM,20mM)及不同浸泡時間(1 h, 2 h, 3h,6h)對Zn0.995Gd0.005O奈米線之晶體結構、表面微結構、光
學及物理特性之影響。並將Zn1-xGdxO奈米線之結構製作成染料敏化太陽能電池，研究各種不同製程參數對其染料敏化太陽能電池之影響。實驗結果顯示，Gd摻雜ZnO奈米線仍然維持ZnO之纖鋅礦(002)軸優選排向，隨著Gd含量的摻雜，Zn1-xGdxO奈米線的能隙值由3.196 eV下降至3.106 eV，顯示可見光波長之光學吸收也會增加。隨著浸泡濃度及浸泡時間的增加，奈米線長度及寬度均有增加的趨勢，有助於染料的吸附。另外在太陽能電池之特性方面，隨著浸泡濃度及浸泡時間的增加，染料敏化太陽能電池短路電流密度JSC（mA/cm2）、開路電壓VOC（V）、填充因子(FF)和光電轉換效率η（%）均會增加。但是當浸泡濃度增加至20 mM時，染料敏化太陽能電池特性會有下降的趨勢，這可能是因為當奈米線長度及線徑增加後，染料敏化太陽能電池的內部阻抗上升，導致太陽能電池特性下降。最後經由計算結果得知，Zn0.995Gd0.005O奈米線
電極於浸泡濃度10 mM下其光電轉換效率比純氧化鋅薄膜電極元件的效率高出約85%。
This study used sol-gel ZnO seed layer on the FTO transparent conductive glass substrate, and the use of chemical bath deposition on the ZnO seed layer grown Zn0.995Gd0.005O nanowire immersed. Different concentrations of different immersion (5mM, 10mM, 20mM) and different soaking time (1 h, 2 h, 3h, 6h) on Zn0.995Gd0.005O nanowire of the crystal structure, surface microstructure, optical and physical characteristics influence . The structure will Zn0.995Gd0.005O nanowires produced dye-sensitized solar cells, study of different process parameters on dye-sensitized Solar Cell.
Experimental results show that, Gd doped ZnO nanowires of wurtzite ZnO remains (002) axis preferred orientation, doped with Gd content, Zn0.995Gd0.005O nanowires energy gap decreased from the 3.196 eV to 3.106 eV, shows the optical absorption of visible light wavelength will increase. With the soaking concentration and soaking time increased, the nanowire length and width of the increasing trend, helps dye adsorption. Another characteristic of solar cells, along with the soaking concentration and soaking time increased, the dye-sensitized solar cell short circuit current density JSC (mA/cm2), open circuit voltage Voc (V), fill factor (FF) and photoelectric conversion efficiency η (%) will increase. But when soaking concentration to 20 mM, the dye-sensitized solar cell characteristics will decline, this may be because when the nanowire length and diameter increased, the dye-sensitized solar cell internal resistance increased, leading to solar cells properties down. Last From the result, Zn0.995Gd0.005O nanowire electrode on the concentration of 10 mM soak under the photoelectric conversion efficiency than the pure ZnO thin film electrode device efficiency is about 85% higher. |
