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HUSTIR > College of Engineering > Department of Mechanical Engineering & Graduate Institute of Precision Machinery and Manufacturing Technology > Journal > Item 310993100/270

Please use this identifier to cite or link to this item: http://ir.hust.edu.tw/dspace/handle/310993100/270

Title:	導電帶與價電帶井深比例對405-nm氮化銦鎵量子井雷射特性之影響
Authors:	劉柏挺
Contributors:	修平技術學院機械工程系
Keywords:	氮化銦鎵導電帶與價電帶井深比例量子井雷射臨界電流
Date:	2004-09
Issue Date:	2008-08-22T09:35:13Z
Abstract:	本文以數值計算來探討導電帶與價電帶井深比例對405-nm氮化銦鎵量子井雷射特性的影響。特別是導電帶與價電帶井深比例為7/3的InxGa1-xN/InyGa1-yN異質結構的光學特性。比較顯示現今大家所認同的井深比例為7/3比2002年以前一般所認同的井深比例為3/7有較佳的雷射效能及在量子井有較均勻的載子濃度分布。本文亦由模擬的結果推導出405 nm雷射結構在一些特定銦含量的披覆層時，其量子井厚度與量子井銦含量的關係式，以作為設計的參考。
Relation:	修平學報 9, 53-68
Appears in Collections:	[Department of Mechanical Engineering & Graduate Institute of Precision Machinery and Manufacturing Technology] Journal

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