Hsiuping University of Science and Technology Institutional Repository : Item 310993100/2814

English | 正體中文 | 简体中文 | Items with full text/Total items : 4334/7631
Visitors : 3187330 Online Users : 22

RC Version 3.2 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.

Scope Adv. Search

Login ‧ Upload ‧ Help ‧ About ‧ Administer

HUSTIR > College of Engineering > Department of Electrical Engineering & Graduate Institute > Monograph > Item 310993100/2814

Please use this identifier to cite or link to this item: http://ir.hust.edu.tw/dspace/handle/310993100/2814

Title:	具高阻抗之靜態隨機存取記憶體
Authors:	魏芃葦;陳翊綸
Contributors:	電機工程系
Keywords:	高阻抗 SARM 靜態隨機記憶體 HSPICE
Date:	2011-12-07
Issue Date:	2012-07-25T06:04:19Z
Abstract:	本專題所提出之具高靜態雜訊邊際及低待機功率消耗之SRAM，其經使用TSMC 90奈米CMOS製程參數加以模擬，證實其不但可有效避免寫入邏輯1困難之問題，並能有效降低待機功率，且具良好的靜態雜訊邊際（SNM），再者，即使將電源供應電壓下降至1.0V特，並使用TSMC 90奈米CMOS製程參數加以模擬，仍能具有良好的性能
Appears in Collections:	[Department of Electrical Engineering & Graduate Institute] Monograph

Files in This Item:

File	Size	Format
全文.pdf	954Kb	Adobe PDF	1739	View/Open