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Title: Effect of band-offset ratio on characteristics of blue InGaN quantum-well lasers
Authors: Bo-Ting Liou
Sheng-Horng Yen
Cheng-Yang Lin
Yen-Kuang Kuo
Contributors: Department of Mechanical Engineering
Keywords: InGaN
Band-Offset Ratio
Quantum-Well Laser
Threshold Current
Date: 2006-09
Issue Date: 2008-08-25T04:01:22Z
Abstract: The effect of the band-offset ratio on the characteristics of the blue InGaN quantum-well lasers is studied numerically. Specifically, the optical properties are investigated when the band-off ratio of the InxGa1-xN/InyGa1-yN heterojunction is 7/3. Simulation results indicate that the laser performance is better for a blue laser diode with a band-offset ratio of 7/3 than for one with a band-offset ratio of 3/7. Moreover, the problem of non-uniform hole distribution in the blue InGaN quantum-well lasers becomes less severe, and the non-uniform electron distribution becomes more obvious when the band-offset ratio is changed from 3/7 to 7/3. The lowest threshold current is obtained when the number of InGaN well layers is one when the band-offset ratio is 7/3.
Relation: 修平學報 13, 297-310
Appears in Collections:[Department of Mechanical Engineering & Graduate Institute of Precision Machinery and Manufacturing Technology] Journal

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