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HUSTIR > College of Engineering > Department of Electronic Engineering > Monograph > Item 310993100/3995

Please use this identifier to cite or link to this item: http://ir.hust.edu.tw/dspace/handle/310993100/3995

Title:	氧化鋅奈米線摻雜Eu特性分析研究
Authors:	陳柏諺;林敬堯;陳宥佐;楊柏輝
Contributors:	電子工程系
Keywords:	氧化鋅化學沐浴沉積法奈米柱硝酸銪
Date:	2013-12
Issue Date:	2014-07-15T03:35:01Z
Abstract:	本研究是將氧化鋅晶種層製作在矽基板上，並利用化學沐浴沉積法(Chemical Bath Deposition, CBD)成長摻雜銪(Eu)之氧化鋅奈米線。使用溶膠-凝膠法(Sol-gel)在矽基板上成長氧化鋅薄膜作為氧化鋅奈米線晶種層，透過XRD量測分析氧化鋅奈米線摻雜硝酸銪之繞射峰強度與其晶相生長之關係，結果得知繞射峰(002)晶相具有最優良的取向成長，另外從螢光光譜儀(PL)量測結果分析出不同Eu元素摻雜量之氧化鋅奈米線，會使奈米線的能隙產生變化
Appears in Collections:	[Department of Electronic Engineering] Monograph

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