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HUSTIR > College of Engineering > Department of Electronic Engineering > Monograph > Item 310993100/5012

Please use this identifier to cite or link to this item: http://ir.hust.edu.tw/dspace/handle/310993100/5012

Title:	自組裝單層在銅金屬化阻障層之應用
Authors:	陳怡婷;張裴秝;許玄文;洪志瑋
Contributors:	修平科技大學電子工程系
Keywords:	SiO2
Date:	2015-12
Issue Date:	2016-05-14T08:16:34Z
Abstract:	"本研究主要探討在SiO2 晶圓以NH4OH:H2O2:H2O 溶液在其上形成具可供自組裝單層生長之羥基鍵結表面，並利用自組裝單層做為銅阻障層。在自組裝單層生長部分先採用SC-1 浸泡SiO2 晶圓以後，再放入分別通入OTS 混合甲苯或APTMS 混合甲苯氣氛之真空腔體內，經過一段時間即可生長一層緻密之OTS 或APTMS 自組裝單層在SiO2 晶圓表面。利用水接觸角的角度變化與XPS 分析在SiO2晶圓表面之OTS 或APTMS 自組裝單層生長狀態。由於APTMS 所含之胺基(NH)終端基熱穩定性較OTS 的烷基為佳，因此本研究以「SiO2/APTMS/Cu」結構經不同溫度進行退火處理，利用表面形貌片，電阻量測及XRD 繞射儀檢測分析銅擴散之情形，以評估APTMS 自組裝單層銅金屬化之阻障層能力。"
Appears in Collections:	[Department of Electronic Engineering] Monograph

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