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HUSTIR > College of Engineering > Department of Electronic Engineering > Monograph > Item 310993100/5013

Please use this identifier to cite or link to this item: http://ir.hust.edu.tw/dspace/handle/310993100/5013

Title:	裝飾性非晶質碳氫薄膜之研究
Authors:	祝恆頤;蔡志宏;江柏融;詹佩儀
Contributors:	修平科技大學電子工程系
Keywords:	"射頻電漿沉積"
Date:	2015
Issue Date:	2016-05-14T08:17:03Z
Abstract:	"本研究利用甲苯溶劑取得碳的來源，以進行電將輔助化學氣相沉積a-C:H 薄膜。甲苯溶液前驅物透過加熱氣化，以管路導入真空腔體內利用射頻電漿沉積a-C:H 薄膜在矽基材上。透過拉曼光譜分析顯示，隨著射頻功率越高，a-C:H 薄膜之ID/IG 越大。實驗結果以250 瓦射頻所沉積之a-C:H 薄膜越接近類鑽成分。本研究利用不同厚度之a-C:H 薄膜，因入射光線與a-C:H 薄膜產生干涉而導致薄膜顏色產生差異。因此利用這項技術可以將生活中的金屬物品鍍上一層不同厚度之裝飾性a-C:H 薄膜，可讓物品有不同的顏色及硬度，並具有保護的效果。"
Appears in Collections:	[Department of Electronic Engineering] Monograph

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