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Title: 具低漏電流及預寫控制之雙埠靜態隨機存取記憶體 DUAL PORT SRAM WITH LOWERING LEAKAGE CURRENT AND PREWRITING CONTROL
Authors: 蕭明椿
Contributors: 修平技術學院電機工程系
Date: 2009-03-11
Issue Date: 2013-08-27T06:39:22Z
Abstract: 本創作提出一種具低漏電流及預寫控制之雙埠靜態隨機存取記憶體,其係包括複數個雙埠SRAM晶胞(1)、一第一偏壓電路(2)、以及一第二偏壓電路(3),該等雙埠SRAM晶胞(1)係連接在高電壓節點(VH)與低電壓節點(VL)之間。當該雙埠SRAM操作於主動模式(active mode)時,該第一偏壓電路(2)將高電源供應電壓(HVDD)供應至該高電壓節點(VH),且該第二偏壓電路(3)將接地電壓供應至該低電壓節點(VL);而當該雙埠SRAM操作於待機模式(standby mode)時,該第一偏壓電路(2)將低電源供應電壓(LVDD)供應至該高電壓節點(VH),且該第二偏壓電路(3)將較接地電壓為高之一電壓供應至該低電壓節點(VL)。
Appears in Collections:[Department of Electrical Engineering & Graduate Institute] Patents

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