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HUSTIR > College of Engineering > Department of Electronic Engineering > Monograph > Item 310993100/4565

Please use this identifier to cite or link to this item: http://ir.hust.edu.tw/dspace/handle/310993100/4565

Title:	稀磁性半導體Zn1-xNixO奈米柱之特性分析研究
Authors:	呂政穎;洪義驊;辜霆瑋;林靖傑
Contributors:	電子工程系
Keywords:	光感測器
Date:	2014-12
Issue Date:	2015-08-04T01:14:59Z
Abstract:	一般光感測器可分為 n-n 型與p-n 型，由於n-n 型沒有比p-n 型的感測器效果還要好，且因氧化鋅?米線的結構比薄膜結構表面積還要大，因此氧化鋅?米線的吸光會比薄膜本身還要好，本實驗希望透過?米線摻雜鎳元素，透過摻雜鎳?改變氧化鋅?米線的能隙，將氧化鋅?米線的從n 型半導體改變成p 型半導體，並且與n 型基板形成p-n 接面，即可形成p-n 型的感測器。
Appears in Collections:	[Department of Electronic Engineering] Monograph

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