Hsiuping University of Science and Technology Institutional Repository : Item 310993100/7206
English  |  正體中文  |  简体中文  |  Items with full text/Total items : 4334/7631
Visitors : 3185992      Online Users : 68
RC Version 3.2 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
Scope Adv. Search
LoginUploadHelpAboutAdminister

Please use this identifier to cite or link to this item: http://ir.hust.edu.tw/dspace/handle/310993100/7206

Title: 氧化鋅薄膜摻雜銅元素之晶體結構特性分析研究
Authors: 許秦維;林祐崧;高旭賢;黃禹博
Contributors: 電子工程系
Keywords: 氧化鋅薄膜摻雜銅元素之晶體結構特性分析研究
Date: 2019-06
Issue Date: 2020-06-20T08:29:51Z
Abstract: 本研究是利用溶膠-凝膠法(Sol-gel)將氧化鋅摻雜銅元素(Zn1-xCuxO,x=0.1)薄膜製作在矽基板上,並使用加熱板(300oC)及快速熱退火熱處理(400oC~700oC,4種熱處理溫度)比較分析不同熱處理溫度(400oC~700oC)對氧化鋅晶體結構特性之影響,透過XRD量測分析氧化鋅奈米線摻雜摻雜銅元素之繞射峰強度與其晶相生長之關係,研究結果得知氧化鋅摻雜銅元素之繞射峰(002)晶相具有最優良的取向成長,且熱處理溫度700oC的晶體結構會有最佳晶體結構。
Appears in Collections:[Department of Electronic Engineering] Monograph

Files in This Item:

File SizeFormat
氧化鋅薄膜摻雜銅元素之晶體結構特性分析研究5-1.pdf2352KbAdobe PDF413View/Open

All items in HUSTIR are protected by copyright, with all rights reserved.

 


DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - Feedback