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日期題名作者
1994 Electroluminescence Characteristics and Current-Conduction Mechanism of a-SiC:H P-I-N Thin-Film Light-Emitting Diodes with Barrier Layer Inserted at P-I Interface T. S. Jen; J. W. Pan; N. F. Shin; J. W. Hong; C. Y. Chang
1994 Electroluminescence of a-SiC:H p-i-n thin-film light-emitting diodes with quantum-well injection structures T. S. Jen; N. F. Shin; W. C. Tsay; J. Y. Chen; S. L. Ning; J. W. Hong; C. Y. Chang
2000 Evaluation of single- and multilayered amorphous tantalum nitride thin films as diffusion barriers in copper metallization G. S. Chen; S. T. Chen; L. C. Yang; P. Y. Lee
2001 ?Evolution of magnetotransport properties and spin-glass behavior of the La0.7-xNdxPb0.3MnO3 system? S. L. Young; H. Z. Chen; Lance Horng; Y. C. Chen
2001 Excess Noise Analysis of Separate Absorption Multiplication Region Superlattice Avalanche Photodiodes N. F. Shih
2000 Excess Noise of Superlattice Avalanche Photodiodes N. F. Shih
1999 ?The fabricated and physical properties of the La1-xPbxMnO3 magnetism materials? H. Z. Chen; S. L. Young
1999 The gorwth process and characterization of Y1 Ba2 Cu3 O7-δ superconduction thin films H. Z. Chen
1992 Graded-Gap a-SiC:H p-i-n Thin-Film Light-Emittin Diodes J. W. Hong; N. F. Shin; T. S. Jen; S. L. Ning; C. Y. Chang
1998 The Grain Growth and Admittance-Frequency Properties of the ZnO Semiconductor H. Z. Chen

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